PED2510L mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product i.
.It is ESD protested.
General Features
* VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD R.
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